The forward characteristics for silicon and germanium diodes are shown below. For forward voltages below about 0.6 v for silicon and 0.2 v for germanium the current is very small. In the reverse bias condition the reverse saturation current (leakage current) is of the order of several nA to several mA. Leakage current is very temperature-dependent and it is found that the reverse saturation current approximately doubles for every 10°C rise in temperature.
At the reverse breakdown voltage (or peak inverse voltage, PIV) the diode will break down, and unless the current is limited by a resistor the device will be damaged. Diodes are not used on this part of the characteristic except in the case of zener diodes.
Try to check this option 3 phase bridge rectifier
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